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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM7785-35SL TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G CONDITIONS UNIT dBm dB A dB % Two-Tone Test Po=35.0dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) MIN. 45.0 5.0 -42 TYP. MAX. 45.5 6.0 8.0 33 -45 8.0 9.0 0.8 9.0 100 VDS=10V f = 7.7 to 8.5GHz add IM3 IDS2 Tch dBc A C Recommended Gate Resistance(Rg): 28 (Max.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Channel to Case UNIT mS V A V C/W MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 1.3 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM7785-35SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 20 115.4 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) 0.70.15 4 - C1.0 (1) Unit in mm 2.5 MIN. (1) Gate (2) Source (3) Drain (2) (2) (3) 20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 2.60.3 17.40.4 8.00.2 0.2 MAX. 1.40.3 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 2.40.3 5.5 MAX. TIM7785-35SL RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=10V 47 IDS8.0A Pin=39.5dBm 46 45 44 7.7 7.9 8.1 8.3 8.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) freq.=8.5GHz VDS=10V 46 IDS8.0A 80 70 Pout(dBm) 44 60 50 42 40 add 40 30 20 10 34 36 38 40 Pin(dBm) 3 add(%) Pout TIM7785-35SL Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 PT(W) 80 60 40 20 0 40 80 120 160 200 Tc( C ) IM3 vs. Output Power Characteristics -10 VDS=10V IDS8.0A -20 freq.=8.5GHz f=5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 40 Pout(dBm) @Single carrier level 4 |
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